The parameters of CMOS device D1 are: VOHmax=3.84V, VOLmax=0.33V, VIHmax=1.8V, VILmax=0.9V, IOH(max)

The parameters of CMOS device D1 are: VOHmax=3.84V, VOLmax=0.33V, VIHmax=1.8V, VILmax=0.9V, IOH(max)=-4mA，IOL(max)=4mA, IIH=1uA, IIL=-1uA. The parameters of CMOS device D2 are: VOHmax=2.8V, VOLmax=0.4V, VIHmax=2.0V, VILmax=0.8V, IOL(max)=8mA, IOH(max)=-400uA, IIL=-0.4mA, IIH=20uA. If device D1 drives device D2, the LOW-state DC noise margin and the fan-out is（）

A.0.5V, 10

B.1.84V，10

C.0.47V，20

D.0.47V, 10

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